? 2002 ixys all rights reserved 1 - 4 302 mii 400-12e4 mid 400-12e4(t) mdi 400-12e4 igbt module phaseleg and chopper topolgies with optional temperature sensor features ? npt 3 igbt - low saturation voltage - positive temperature coefficient - fast switching - short tail current for optimized performance in resonant circuits hiperfred tm diodes - fast and soft reverse recovery - low operating forward voltage - low leakage current ntc sensor for measurement of case temperature package - low inductive current path - screw connection to high current main terminals - use of non interchangeable connectors for auxiliary terminals possible - kelvin emitter terminal for easy drive - isolated ceramic base plate applications drives -ac -dc power supplies - rectifiers with power factor correction and recuperation capability - ups i c25 = 420 a v ces = 1200 v v ce(sat) typ. = 2.2 v inductive load, t vj = 125c v ce = 600 v; i c = 300 a v ge = 15 v; r g = 4.7 ? igbts t1-t2 symbol conditions maximum ratings v ces t vj = 25c to 150c 1200 v v ges 20 v i c25 t c = 25c 420 a i c80 t c = 80c 300 a i cm v ge = 15 v; r g = 4.7 ? ; t vj = 125c 450 a v cek rbsoa , clamped inductive load; l = 100 h v ces t sc v ce = 900 v; v ge = 15 v; r g = 4.7 ? ; t vj = 125c 10 s (scsoa) non repetitive p tot t c = 25c 1700 w symbol conditions characteristic values (t vj = 25 c, unless otherwise specified) min. typ. max. v ce(sat) i c = 300 a; v ge = 15 v; t vj = 25c 2.2 2.8 v t vj = 125c 2.6 v v ge(th) i c = 10 ma; v ge = v ce 4.5 6.5 v i ces v ce = v ces ; v ge = 0 v; t vj = 25c 0.8 3.3 ma t vj = 125c 3.5 ma i ges v ce = 0 v; v ge = 20 v 600 na t d(on) 150 ns t r 60 ns t d(off) 680 ns t f 50 ns e on 36 mj e off 30 mj c ies v ce = 25 v; v ge = 0 v; f = 1 mhz 17 nf q gon v ce = 600 v; v ge = 15 v; i c = 300 a 2.25 c r thjc (per igbt) 0.08 k/w r thjh with heatsink compound 0.15 k/w mii 400-12e4 mid 400-12e4 mdi 400-12e4 mid 400-12e4t 6 7 3 1 2 8 9 11 10 t1 t2 d1 d2 3 1 2 11 10 t2 d1 d12 3 1 2 8 9 t1 d11 d2 ntc for ...t version only
? 2002 ixys all rights reserved 2 - 4 302 mii 400-12e4 mid 400-12e4(t) mdi 400-12e4 dimensions in mm (1 mm = 0.0394") optional accessories for modules keyed twin plugs (ul758, style 1385, csa class 5851, guide 460-1-1) type zy180l with wire length 350mm ? for pins 4 (yellow wire) and 5 (red wire) ? for pins 11 (yellow wire) and 10 (red wire) type zy180r with wire length 350mm ? for pins 7 (yellow wire) and 6 (red wire) ? for pins 8 (yellow wire) and 9 (red wire) free wheeling diodes d1-d2 symbol conditions maximum ratings i f25 t c = 25c 450 a i f80 t c = 80c 290 a symbol conditions characteristic values min. typ. max. v f i f = 300 a; v ge = 0 v; t vj = 25c 2.3 2.7 v t vj = 125c 1.7 v i rm i f = 225 a; di f /dt = -2000 a/s; t vj = 125c 200 a t rr v r = 600 v; v ge = 0 v 220 ns r thjc (per diode) 0.15 k/w r thjh with heatsink compound 0.3 k/w module symbol conditions maximum ratings t vj -40...+150 c t stg -40...+125 c v isol i isol 1 ma; 50/60 hz 4000 v~ m d mounting torque (module, m6) 2.25 - 2.75 nm (terminals, m6) 4.5 - 5.5 nm symbol conditions characteristic values min. typ. max. d s creepage distance on surface 2 mm d a strike distance in air 2 mm weight 250 g chopper anti parallel diodes d11-d12 symbol conditions maximum ratings i f25 t c = 25c 150 a i f80 t c = 80c 95 a symbol conditions characteristic values min. typ. max. v f i f = 100 a; v ge = 0 v; t vj = 25c 2.3 2.7 v t vj = 125c 1.7 v i rm i f = 75 a; di f /dt = -750 a/s; t vj = 125c 80 a t rr v r = 600 v; v ge = 0 v 220 ns r thjc (per diode) 0.45 k/w r thjh with heatsink compound 0.9 k/w equivalent circuits for simulation conduction igbt (typ. at v ge = 15 v; t j = 125c) v 0 = 1.0 v; r 0 = 5.3 m ? free wheeling diode d1-d2 (typ. at t j =125c) v 0 = 1.3 v; r 0 = 1.3 m ? thermal response igbt (typ.) c th1 = 0.52 j/k; r th1 = 0.078 k/w c th2 = 1.29 j/k; r th2 = 0.002 k/w free wheeling diode d1-d2 (typ.) c th1 = 0.43 j/k; r th1 = 0.147 k/w c th2 = 0.79 j/k; r th2 = 0.003 k/w temperature sensor ntc (...t version only) symbol conditions characteristic values min. typ. max. r 25 t = 25c 2057 ? b 25/100 3560 k r(t) = r 25 e b 25/100 11 t 298k ( )
? 2002 ixys all rights reserved 3 - 4 302 mii 400-12e4 mid 400-12e4(t) mdi 400-12e4 t j = 125c 0 500 1000 1500 2000 0 100 200 300 0 100 200 300 01234 100 300 500 700 900 0123456 100 300 500 700 900 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 0123456 100 300 500 700 900 11v 15v 0 3 6 9 12 15 0 100 200 300 400 500 600 11v 15v 9v 9v v ce v i c v ce i c v v v v ge v f i c a i f q g -di/dt v v ge a i rm t rr ns mii400-12e4 i rm t rr 13 v a t j = 25c v ge =17v a v ge =17v 13v t j = 25c t j = 125c v ce = 20v a t j = 25c t j = 125c nc a/ s v ce = 600v i c = 300a t j = 125c v r = 600v i f = 225a fig. 1 typ. output characteristics fig. 2 typ. output characteristics fig. 3 typ. transfer characteristics fig. 4 typ. forward characteristics of free wheeling diode d1-d2 fig. 5 typ. turn on gate charge fig. 6 typ. turn off characteristics of free wheeling diode d1-d2
? 2002 ixys all rights reserved 4 - 4 302 mii 400-12e4 mid 400-12e4(t) mdi 400-12e4 0 100 200 300 400 500 600 0 50 100 150 200 0 50 100 150 200 0 100 200 300 400 500 600 0 10 20 30 40 50 60 0 150 300 450 600 750 900 0.00001 0.0001 0.001 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 0 5 10 15 20 25 30 0 20 40 60 80 100 0 400 800 1200 1600 2000 0 5 10 15 20 25 30 35 40 0 40 80 120 160 200 0 80 160 240 320 400 single pulse 0 200 400 600 800 1000 1200 0 100 200 300 400 500 e on t d(on) t r e off t d(off) t f e on t r e off t f i c a i c a e off e on t t r g ? r g ? v ce t s mj e on mj e off ns t ns t i cm k/w z thjc v a mj ns ns mj t d(on) t d(off) mii400-12e4 diode igbt v ce = 600v v ge = 15v r g = 4.7 ? t j = 125c v ce = 600v v ge = 15v r g = 4.7 ? t j = 125c v ce = 600v v ge = 15v i c = 300a t j = 125c v ce = 600v v ge = 15v i c = 300a t j = 125c r g = 4.7 ? t j = 125c v cek < v ces fig. 7 typ. turn on energy and switching fig. 8 typ. turn off energy and switching times versus collector current times versus collector current fig. 9 typ. turn on energy and sw itching fig.10 typ. turn off energy and switching times versus gate resistor times versus gate resistor fig. 11 reverse biased safe operating area fig. 12 typ. transient thermal impedance rbsoa
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